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White-collarSenior (6-10 yr)EngineeringMotor & Power ElectronicsCritical demand

SiC / GaN Device Engineer

Selects, characterises and qualifies wide-bandgap power devices for next-generation EV converters.

Salary band · India

₹22L – ₹48L

Median ₹32L

Experience

512 yrs

Senior (6-10 yr)

Hiring outlook

Critical

Role overview

WBG device engineers work closely with vendors (Wolfspeed, Infineon, onsemi) to push devices into qualified design-ins. The role mixes datasheet analysis, double-pulse testing, reliability stress and package-level thermal characterisation.

Key skills

SiC MOSFETGaN HEMTDouble-pulse testSwitching lossesReliability stressPackage thermal characterisation

Tools & software

Altium DesignerPSpice / LTspicePLECSMATLAB / SimulinkTektronix / Keysight bench tools

Responsibilities

  • Design power-electronics circuits — schematic capture, board layout review and worst-case analysis — for the assigned EV converter or controller.
  • Lead component selection across Si, SiC and GaN device families with vendors such as Infineon, Wolfspeed and onsemi.
  • Drive prototype bring-up, lab characterisation and conducted/radiated EMC compliance to CISPR 25 / IEC 61851.

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Requirements

  • BE / BTech in Electrical or Electronics Engineering.
  • Hands-on schematic capture and PCB layout experience (Altium / Cadence Allegro / Mentor Xpedition).
  • Strong fundamentals in switch-mode converters, magnetics and gate-driver design.

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Typical employers

CSIR-CEERIBosch IndiaTata ElxsiSona Comstar BLWAther Energy

Industries

EV OEM R&DResearch institute

Reports to: Power Electronics Manager

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